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| RB715W Diodes Shottky barrier diode RB715W Application Low current rectification Features 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability. (2) 0.5 0.5 1.00.1 External dimensions (Unit : mm) Lead size figure (Unit : mm) 1.0 0.5 0.5 1.60.2 0.30.1 0.05 (3) 0.150.05 0.7 0.7 0.80.1 1.60.2 0.7 00.1 0.1Min EMD3 0.6 0.6 0.20.1 -0.05 (1) 0.550.1 0.70.1 Construction Silicon epitaxial planer Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.550.1 0 1.750.1 0.30.1 3.50.05 1.80.2 5.50.2 1.80.1 0.50.1 00.1 8.00.2 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature (*1)Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 -40 to +125 Unit V V mA mA Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage IR Reverse current Capacitance between terminals Ct Min. - Typ. 2.0 Max. 0.37 1 - Unit V A pF Conditions IF=1mA VR=10V VR=1.0V f=1.0MHz Rev.B 1.3 1/3 RB715W Diodes Electrical characteristic curves (Ta=25C) 100 Ta=125 1000 Ta=125 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75 10 1 0.1 Ta=75 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=-25 Ta=25 Ta=-25 1 0.1 Ta=25 0.01 0.001 0.01 0 500 1000 1500 0 10 20 30 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 300 1 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 290 280 270 260 250 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=1mA n=30pcs 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.083nA Ta=25 VR=10V n=30pcs 9 8 7 6 5 4 3 2 1 0 Ta=25 f=1MHz VR=0V n=10pcs AVE:267.4mV AVE:2.02pF VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms Ifsm 8.3ms 8.3ms 1cyc 9 8 7 6 5 4 3 2 1 Ifsm t 15 10 10 5 AVE:7.30A 0 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10000 Mounted on epoxy board IM=1mA IF=10mA 0.04 Per diode 0.003 Per diode TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 1ms time REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.03 D=1/2 0.02 Rth(j-a) 0.002 D=1/2 DC 0.001 Sin(180) 300us Sin(180) DC 100 Rth(j-c) 0.01 10 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB715W Diodes 0.1 Per diode 0.1 VR D=t/T VR=20V Tj=125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 0 0 25 50 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T 0.08 0.06 0.04 0.02 0 75 100 125 0 Per diode 0A 0V Io t T VR D=t/T VR=20V Tj=125 DC D=1/2 Sin(180) D=1/2 Sin(180) 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) Rev.B 3/3 |
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